Back to results
US 2021/0265476 A1Published application
Method for fabricating a semiconductor device with a programmable contact
AssigneeNanya Technology Corporation
InventorChin-Ling HUANG
Life of this patent
Estimating the term…
Abstract
The present application discloses a method for fabricating a semiconductor device includes providing a substrate, forming a gate stack on the substrate and a pair of heavily-doped regions in the substrate, forming a programmable contact having a first width on the gate stack, and forming a first contact having a second width, which is greater than the first width, on one of the pair of heavily-doped regions.
Claims8
A method for fabricating a semiconductor device, comprising:
- providing a substrate;
- forming a gate stack on the substrate and a pair of heavily-doped regions in the substrate;
- forming a programmable contact having a first width on the gate stack;
- forming a first contact having a second width, which is greater than the first width, on one of the pair of heavily-doped regions.
1 more element
Dependencies are inferred from the claim text.