Non-volatile memory device and method for manufacturing the same
AssigneeUnited Microelectronics Corp.
InventorsKuo-Lung Li, Chih-Hao Pan, Szu-Ping Wang, Po-Hsuan Chen, Chi-Cheng Huang
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Abstract
A non-volatile memory device is provided. The non-volatile memory device includes a substrate, a first gate structure disposed on the substrate, a second gate structure disposed on the substrate, and a memory gate structure disposed on the substrate and between the first gate structure and the second gate structure. The memory gate structure at least covers the first gate structure and the second gate structure. The memory gate structure includes a charge storage layer disposed on the substrate and a memory gate layer disposed on the charge storage layer.
Claims16
A non-volatile memory device, comprising:
- a substrate;
- a first gate structure, disposed on the substrate;
- a second gate structure, disposed on the substrate;
- a memory gate structure, disposed on the substrate and between the first gate structure and the second gate structure and covering at least the first gate structure and the second gate structure, wherein the memory gate structure comprises:
- a charge storage layer, disposed on the substrate;
- and
- a memory gate layer, disposed on the charge storage layer.
A method for manufacturing a non-volatile memory device, the method comprising:
- providing a substrate;
- forming a first gate structure and a second gate structure on the substrate;
- forming a charge storage layer covering the first gate structure, the second gate structure, and the substrate;
- forming a memory gate layer on the charge storage layer;
- and
- defining the memory gate layer and the charge storage layer to form a memory gate structure, wherein the memory gate structure covers at least the first gate structure and the second gate structure.
Dependencies are inferred from the claim text.