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US 2021/0265473 A1Published application
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsYutaro YAMAGUCHI, Tomohiro OTSUKA, Masatake HANGAI, Shintaro SHINJO
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Abstract
Gate fingers extending symmetrically from both sides of gate connecting portions, drain electrodes adjacent to both the gate fingers extending from both the sides of the gate connecting portions, and source electrodes respectively adjacent to the gate fingers extending from both the sides of the gate connecting portions are included. Gate air bridges connect the gate connecting portions and a gate routing line while straddling the source electrodes.
Claims6
A semiconductor device comprising:
- a semiconductor layer disposed on a substrate;
- at least one gate connecting portion disposed on the semiconductor layer;
- a plurality of gate fingers extending symmetrically from both sides of the at least one gate connecting portion;
- a drain electrode adjacent to both one of the plurality of gate fingers which extends from a first side of the at least one gate connecting portion and another one of the plurality of gate fingers which extends from a second side of the at least one gate connecting portion, the second side being opposite to the first side;
- a plurality of source electrodes respectively adjacent to a gate finger among the plurality of gate fingers extending from the first side of the at least one gate connecting portion and another gate finger among the plurality of gate fingers extending from the second side of the at least one gate connecting portion;
- a gate routing line via which electric power to be inputted to the plurality of gate fingers is transmitted;
- a gate air bridge connecting the at least one gate connecting portion and the gate routing line while straddling a source electrode among the plurality of source electrodes adjacent to said another gate finger extending from the second side of the at least one gate connecting portion;
- and
- a metal layer disposed under each of the plurality of source electrodes and having etching resistance higher than etching resistance of the plurality of source electrodes.
6 more elements
A semiconductor device comprising:
- a semiconductor layer disposed on a substrate;
- at least one gate connecting portion disposed on the semiconductor layer;
- a plurality of gate fingers extending symmetrically from both sides of the at least one gate connecting portion;
- a drain electrode adjacent to both one of the plurality of gate fingers which extends from a first side of the at least one gate connecting portion and another one of the plurality of gate fingers which extends from a second side of the at least one gate connecting portion, the second side being opposite to the first side;
- a plurality of source electrodes respectively adjacent to a gate finger among the plurality of gate fingers extending from the first side of the at least one gate connecting portion and another gate finger among the plurality of gate fingers extending from the second side of the at least one gate connecting portion;
- a gate routing line via which electric power to be inputted to the plurality of gate fingers is transmitted;
- and
- a gate air bridge connecting the at least one gate connecting portion and the gate routing line while straddling a source electrode among the plurality of source electrodes adjacent to said another gate finger extending from the second side of the at least one gate connecting portion,
- wherein the at least one gate connecting portion includes a plurality of gate connecting portions arranged in parallel to be disposed in a line on the semiconductor layer,
- wherein the semiconductor device further includes an isolation resistor disposed between adjacent gate connecting portions among the plurality of gate connecting portions,
- wherein the drain electrode is divided into two portions, one of the two portions being adjacent to a gate finger extending from the first side of the at least one gate connecting portion, and another one of the two portions being adjacent to a gate finger extending from the second side of the at least one gate connecting portion;
- and
- the two portions are connected to each other by a first drain air bridge straddling the isolation resistor.
10 more elements
A semiconductor device comprising:
- a semiconductor layer disposed on a substrate;
- at least one gate connecting portion disposed on the semiconductor layer;
- a plurality of gate fingers extending symmetrically from both sides of the at least one gate connecting portion;
- a drain electrode adjacent to both one of the plurality of gate fingers which extends from a first side of the at least one gate connecting portion and another one of the plurality of gate fingers which extends from a second side of the at least one gate connecting portion, the second side being opposite to the first side;
- a plurality of source electrodes respectively adjacent to a gate finger among the plurality of gate fingers extending from the first side of the at least one gate connecting portion and another gate finger among the plurality of gate fingers extending from the second side of the at least one gate connecting portion;
- a gate routing line via which electric power to be inputted to the plurality of gate fingers is transmitted;
- a gate air bridge connecting the at least one gate connecting portion and the gate routing line while straddling a source electrode among the plurality of source electrodes adjacent to said another gate finger extending from the second side of the at least one gate connecting portion
- a drain routing line to which electric power outputted from the drain electrode is transmitted;
- and
- a second drain air bridge connecting a portion in the drain electrode, the portion being adjacent to the gate connecting portion, and the drain routing line.
7 more elements
Dependencies are inferred from the claim text.