Vertical thin film transistor with single gate electrode with micro-perforations

Abstract

The present invention provides a vertical-type thin film transistor (TFT). The vertical TFT may comprise a source electrode and a drain electrode extending parallel to each other, with a semiconductor layer arranged in between the source electrode and the drain electrode. A single gate electrode may be embedded in the semiconductor layer, the single gate electrode comprising micro-perforations configured to control the flow of electrons therethrough in dependence on a predetermined voltage difference between the source electrode and the single gate electrode. The gate electrode masks a direct electric field between the source electrode and the drain electrode. A rate of flow of electrons through the perforations is increased with an increase in the predetermined voltage.

Dependencies are inferred from the claim text.