Capacitor, semiconductor device including the same, and method of fabricating capacitor

A semiconductor device comprising:

• a substrate;
• a gate structure on the substrate;
• a first source/drain region and a second source/drain region, both arranged in upper portions of the substrate;
• and
• a capacitor on the substrate,
• the capacitor comprising a bottom electrode, a top electrode, a dielectric film between the bottom electrode and the top electrode, and a doped Al2O3 film between the top electrode and the dielectric film,
• the bottom electrode being electrically connected to the first source/drain region,
• the top electrode being over the bottom electrode;
• the doped Al2O3 film comprising a first dopant, and
• an oxide comprising a same element as the first dopant has a higher dielectric constant than a dielectric constant of Al2O3.

A method of fabricating a capacitor, the method comprising:

• forming a bottom electrode;
• forming a dielectric film on the bottom electrode;
• forming a doped Al2O3 film on the dielectric film, the doped Al2O3 film including a first dopant, and an oxide comprising a same element as the first dopant having a higher dielectric constant than a dielectric constant of Al2O3;
• and
• forming a top electrode on the doped Al2O3 film.

A capacitor comprising:

• a bottom electrode;
• a top electrode over the bottom electrode;
• a dielectric film between the bottom electrode and the top electrode;
• and
• a doped Al2O3 film between the top electrode and the dielectric film,
• the doped Al2O3 film including a first dopant, an oxide of the first dopant having a dielectric constant that is higher than a dielectric constant of Al2O3.