Image sensor with shallow trench edge doping
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYueh-Chuan Lee, Chia-Chan Chen
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Abstract
The present disclosure relates to an integrated chip. The integrated chip includes a photodetector region provided in a substrate. A dielectric material is disposed within a trench defined by one or more interior surfaces of the substrate. The trench has a depth that extends from an upper surface of the substrate to within the substrate. A doped silicon material is disposed within the trench and has a sidewall facing away from the doped silicon material. The sidewall contacts a sidewall of the dielectric material along an interface extending along the depth of the trench.
Claims20
An integrated chip, comprising:
- a photodetector region provided in a substrate;
- a dielectric material disposed within a trench defined by one or more interior surfaces of the substrate, the trench having a depth that extends from an upper surface of the substrate to within the substrate;
- and
- a doped silicon material disposed within the trench and having a sidewall facing away from the doped silicon material, the sidewall contacting a sidewall of the dielectric material along an interface extending along the depth of the trench.
An integrated chip, comprising:
- a substrate;
- a dielectric material disposed within a trench defined by one or more interior surfaces of the substrate;
- and
- a doped material disposed within the trench and having a sidewall facing away from the doped material and contacting a sidewall of the dielectric material, wherein the doped material within the trench has a first width and the trench has a second width that is greater than the first width.
An image sensor, comprising:
- a substrate having a first side and a second side opposite the first side;
- a grid structure and a color filter provided on the first side of the substrate;
- a photodetector region provided within the substrate;
- a dielectric material disposed within a trench defined by one or more interior surfaces of the substrate;
- and
- a doped material disposed within the trench and having a sidewall facing away from the doped material and facing a sidewall of the dielectric material, wherein the sidewall of the doped material extends in a direction that is laterally offset from the grid structure.
Dependencies are inferred from the claim text.