US 2021/0265402 A1Published application

Solid-state image sensor

AssigneeSony Semiconductor Solutions Corporation

InventorToshiaki ONO

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Abstract

A solid-state image sensor includes a plurality of imaging device blocks each including P×Q imaging devices. In an imaging device block, first charge movement controlling electrodes are provided between the imaging devices, and second charge movement controlling electrodes are provided between the imaging device blocks. In the imaging device block, P imaging devices are arrayed along a first direction, and Q imaging devices are arrayed along a second direction. Charge accumulated in a photoelectric conversion layer of the (P−1)th imaging device from the first imaging device along the first direction is transferred to the photoelectric conversion layer of the Pth imaging device and read out together with charge accumulated in the photoelectric conversion layers of the Q Pth imaging devices, under the control of the first charge movement controlling electrodes.

Claims19

Dependent claims

A solid-state image sensor comprising:

a plurality of imaging device blocks each including P×Q (where P≥2, Q≥1) imaging devices, wherein
each of the imaging devices includes a photoelectric conversion portion that includes a photoelectric conversion layer, an insulating layer, and a charge accumulating electrode arranged opposed to the photoelectric conversion layer with an insulating layer interposed therebetween,
in each of the imaging device blocks, a first charge movement controlling electrode is provided between the imaging devices,
a second charge movement controlling electrode is provided between the imaging device blocks,
in the imaging device blocks, P imaging devices are arrayed along a first direction, and Q imaging device is arrayed along a second direction, and
charge accumulated in the photoelectric conversion layer of a (P−1)th imaging device from a first imaging device along the first direction is transferred to the photoelectric conversion layer of a Pth imaging device and read out together with charge accumulated in the photoelectric conversion layers of Q Pth imaging devices, under control of the first charge movement controlling electrode.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/252,787Filed 7 Jun 2019
Priority: JP 2018-1266513 Jul 2018
Published: 26 Aug 2021
Term ends: Not estimatedThe source records don’t support an estimate.

Classification16 codes

H04N 25/46
Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled: by…
H10F 39/803
Constructional details of image sensors: pixels having integrated switching, control, storage or amplification elements
H04N 25/76
SSIS architectures; Circuits associated therewith: addressed sensors, e.g. MOS or CMOS sensors
H04N 25/778
Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components: comprising amplifiers shared between a…