Image sensors

An image sensor, comprising:

• a semiconductor substrate including an active pixel region and a pad region;
• a pixel element isolation film in the active pixel region, the pixel element isolation film in a pixel trench extending through an interior of the semiconductor substrate;
• and
• a dummy element isolation film in a dummy trench extending through the interior of the semiconductor substrate, the dummy element isolation film extending between the active pixel region and the pad region in at least one of a first direction and a second direction parallel to a top surface of the semiconductor substrate,
• wherein the pixel element isolation film has a first end having a first width in the first direction, the dummy element isolation film has a first end coplanar with the first end of the pixel element isolation film, and the first end of the dummy element isolation film has a second width in the first direction that is greater than the first width.

An image sensor, comprising:

• a semiconductor substrate including an active pixel region and a pad region;
• a pixel element isolation film in the active pixel region, the pixel element isolation film defining a plurality of active pixels in the semiconductor substrate;
• and
• a dummy element isolation film surrounding a periphery of the pixel element isolation film, the dummy element isolation film defining a plurality of dummy pixels in the semiconductor substrate,
• wherein the pixel element isolation film has a first end having a first width in a first direction parallel to a top surface of the semiconductor substrate, the dummy element isolation film has a first end coplanar with the first end of the pixel element isolation film, the first end of the dummy element isolation film has a second width in the first direction, and the second width is greater than the first width.