Semiconductor memory device

A semiconductor memory device comprising:

• a plurality of first conductive layers disposed to be mutually separated in a first direction, the plurality of first conductive layers extending in a second direction intersecting with the first direction;
• a plurality of second conductive layers disposed to be mutually separated in a first direction and to be separated from the plurality of first conductive layers in the first direction, the plurality of second conductive layers extending in the second direction;
• a semiconductor layer that extends in the first direction, the semiconductor layer being opposed to the plurality of first conductive layers and the plurality of second conductive layers;
• a gate insulating layer disposed between the plurality of first conductive layers and the semiconductor layer and between the plurality of second conductive layers and the semiconductor layer;
• a plurality of first insulating portions that extend in the first direction and the second direction in the plurality of first conductive layers and the plurality of second conductive layers, the plurality of first insulating portions separating the plurality of first conductive layers and the plurality of second conductive layers in a third direction intersecting with the first direction and the second direction;
• and
• a plurality of second insulating portions that extend in the first direction and the second direction in the plurality of second conductive layers, at least one second insulating portion of the plurality of second insulating portions being disposed between first insulating portions of the plurality of first insulating portions mutually adjacent in the third direction, the at least one second insulating portion separating the plurality of second conductive layers in the third direction into two or more between the first insulating portions mutually adjacent in the third direction, wherein
• the plurality of first conductive layers are each continuously formed between the first insulating portions mutually adjacent in the third direction, and the plurality of first conductive layers contain a first material, and
• the plurality of second conductive layers contain a second material different from the first material.

A semiconductor memory device comprising:

• a plurality of first conductive layers disposed to be mutually separated in a first direction, the plurality of first conductive layers extending in a second direction intersecting with the first direction;
• a second conductive layer disposed to be separated from the plurality of first conductive layers in the first direction, the second conductive layer extending in the second direction;
• a semiconductor layer that extends in the first direction, the semiconductor layer being opposed to the plurality of first conductive layers and the second conductive layer;
• a gate insulating layer disposed between the plurality of first conductive layers and the semiconductor layer and between the second conductive layer and the semiconductor layer;
• a plurality of first insulating portions that extend in the first direction and the second direction in the plurality of first conductive layers and the second conductive layer, the plurality of first insulating portions separating the plurality of first conductive layers and the second conductive layer in a third direction intersecting with the first direction and the second direction;
• and
• a plurality of second insulating portions that extend in the first direction and the second direction in the second conductive layer, at least one second insulating portion of the plurality of second insulating portions being disposed between first insulating portions of the plurality of first insulating portions mutually adjacent in the third direction, the at least one second insulating portion separating the second conductive layer in the third direction into two or more between the first insulating portions mutually adjacent in the third direction, wherein
• the plurality of first conductive layers are each continuously formed between the first insulating portions mutually adjacent in the third direction, and the plurality of first conductive layers contain a first material,
• the second conductive layer contains a second material different from the first material, and
• one end portion in the first direction of at least one of the plurality of second portions is in contact with the first conductive layer closest to the second conductive layer among the plurality of first conductive layers.