Integrated electronic circuit and method of making comprising a first transistor and a ferroelectric capacitor

A method for producing an integrated electronic circuit, wherein

• a first electrode layer composed of a non-ferroelectric material is applied on a surface of a semiconductor substrate,
• a ferroelectric interlayer is applied on the first electrode layer, and
• a second electrode layer is applied on the ferroelectric interlayer, such that the first electrode layer, the ferroelectric interlayer and the second electrode layer form a ferroelectric capacitor, wherein
• the first electrode layer is electrically conductively connected to a gate terminal of a first transistor of the integrated electronic circuit, wherein a second transistor is electrically conductively connected by its drain terminal to the connection between the ferroelectric capacitor and the gate terminal of the first transistor.