Stacked field effect transistor with wrap-around contacts

A method for forming a semiconductor device, the method comprising:

• forming a p-type nanosheet stack over a substrate, the p-type nanosheet stack comprising a first nanosheet and a second nanosheet;
• forming an n-type nanosheet stack over the p-type nanosheet stack, the n-type nanosheet stack comprising a third nanosheet and a fourth nanosheet;
• forming a first sacrificial layer over a first source or drain (S/D) region of the p-type nanosheet stack;
• forming an isolation dielectric on the first sacrificial layer;
• forming a second sacrificial layer over a second S/D region of the n-type nanosheet stack, the second sacrificial layer on the isolation dielectric;
• and
• replacing the first sacrificial layer with a first wrap-around contact and the second sacrificial layer with a second wrap-around contact.

A semiconductor device comprising:

• a nanosheet stack over a substrate, the nanosheet stack comprising a top portion and a bottom portion separated by a dielectric spacer;
• a first source or drain (S/D) region on a sidewall of a nanosheet in the bottom portion of the nanosheet stack, the first S/D region confined to the sidewall such that the first S/D region does not merge with another S/D region in the nanosheet stack;
• a second S/D region on a sidewall of a nanosheet in the top portion of the nanosheet stack, the second S/D region confined to the sidewall such that the second S/D region does not merge with another S/D region in the nanosheet stack;
• a first wrap-around contact formed over the first S/D region;
• and
• a second wrap-around contact formed over the second S/D region.