Integrated circuit with latch-up immunity

An integrated chip (IC) comprising a first region and a second region disposed on a first side of the first region, the IC comprising:

• a semiconductor substrate;
• a first fin of the semiconductor substrate disposed in the first region of the IC;
• a second fin of the semiconductor substrate disposed in the second region of the IC and laterally spaced from the first fin in a first direction;
• a first doped region disposed in the semiconductor substrate and in the first region of the IC, wherein the first doped region has a first doping type;
• a second doped region disposed in the semiconductor substrate and in the second region of the IC, wherein the second doped region has a second doping type opposite the first doping type;
• and
• an epitaxial structure having the first doping type disposed in the semiconductor substrate and contacting the first doped region, wherein the epitaxial structure is disposed in the first region of the IC and between the first doped region and a lower surface of the semiconductor substrate, and wherein the epitaxial structure has a higher doping concentration of first doping type dopants than the first doped region.

A method for forming an integrated chip (IC), the method comprising:

• forming an epitaxial structure having a first doping type directly over a first region of a first portion of a semiconductor substrate;
• forming a second portion of the semiconductor substrate over the epitaxial structure and over the first portion of the semiconductor substrate, wherein the second portion of the semiconductor substrate contacts an upper surface of the epitaxial structure and an upper surface of a second region of the first portion of the semiconductor substrate, and wherein the second region of the first portion of the semiconductor substrate is disposed on a side of the epitaxial structure;
• forming a first doped region having the first doping type in the second portion of the semiconductor substrate and directly over the epitaxial structure;
• forming a second doped region having a second doping type opposite the first doping type in the second portion of the semiconductor substrate and directly over the second region of the first portion of the semiconductor substrate;
• and
• forming a first fin of the semiconductor substrate and a second fin of the semiconductor substrate by selectively removing portions of the second portion of the semiconductor substrate, wherein the first fin is formed directly over the epitaxial structure, and wherein the second fin is formed laterally spaced from the first fin and directly over the second region of the first portion of the semiconductor substrate.