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US 2021/0265343 A1Published application
Semiconductor device and fabricating the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsKuo-Cheng Ching, Ting-Hung Hsu
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Abstract
An integrated circuit (IC) device comprises a substrate having a metal-oxide-semiconductor (MOS) region; a gate region disposed over the substrate and in the MOS region; and source/drain features in the MOS region and separated by the gate region. The gate region includes a fin structure and a nanowire over the fin structure. The nanowire extends from the source feature to the drain feature.
Claims20
A device comprising:
- a first semiconductor fin structure disposed on a substrate;
- a second semiconductor fin structure disposed on the substrate;
- a first elongated semiconductor component disposed over the first semiconductor fin structure;
- a second elongated semiconductor component disposed over the second semiconductor fin structure;
- a first gate dielectric layer disposed around the first elongated semiconductor component;
- a second gate dielectric layer disposed around the second elongated semiconductor component;
- a first metal layer disposed around the first gate dielectric layer, the first metal layer having a first thickness;
- and
- a second metal layer disposed around the second gate dielectric layer, the second metal layer having a second thickness that is different than the first thickness.
6 more elements
A device comprising:
- an isolation structure disposed on a substrate;
- a first fin structure extending through the isolation structure;
- a first elongated semiconductor component disposed over the first fin structure;
- a first oxide layer disposed around the first elongated semiconductor component, the first oxide layer having a first thickness;
- and
- a second oxide layer disposed directly on the first fin structure and the isolation structure, the second oxide layer having a second thickness that is different from the first thickness.
3 more elements
A device comprising:
- a dielectric isolation structure disposed on a substrate and extending to a first height over the substrate;
- a first fin structure extending to a second height over the substrate that is different than the first height, the first fin structure being formed of a first semiconductor material layer;
- a second semiconductor material layer disposed directly on the first fin structure, the second semiconductor material layer being formed of a different material than the first semiconductor material layer;
- a first elongated semiconductor component disposed over the first fin structure;
- a gate dielectric layer disposed around the first elongated semiconductor component;
- and
- a gate electrode layer disposed around the gate dielectric layer.
4 more elements
The device of claim 16, wherein the first elongated semiconductor component includes germanium.
Dependencies are inferred from the claim text.