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US 2021/0265342 A1Published application
Ldmos finfet structure with buried insulator layer and method for forming same
AssigneeGlobalFoundries U.S. Inc.
InventorsWenjun Li, Man Gu
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Abstract
Integrated circuit (IC) structures including buried insulator layer and methods for forming are provided. In a non-limiting example, a IC structure includes: a substrate; a first fin over the substrate; a source region and a drain region in the first fin; a first gate structure and a second gate structure over the first fin, the first and the second gate structures positioned between the source region and the drain region; and a buried insulator layer including a portion disposed under the first fin.
Claims20
An integrated circuit (IC) structure, comprising:
- a substrate;
- a first fin over the substrate;
- a source region and a drain region in the first fin;
- a first gate structure and a second gate structure over the first fin, the first and the second gate structures positioned between the source region and the drain region;
- and
- a buried insulator layer including a portion disposed under the first fin.
3 more elements
A method comprising:
- forming a first fin and a second fin on a substrate, each fin including a liner on sidewalls thereof;
- forming a mask over the second fin;
- etching to recess the substrate adjacent the first fin, exposing an upper portion of the substrate, wherein the upper portion of the substrate is disposed under the first fin;
- removing the mask;
- depositing an oxide material over the first and second fins;
- and
- annealing to thermally oxidize the upper portion of the substrate, creating a buried insulator layer that includes an oxidized upper portion of the substrate.
4 more elements
Dependencies are inferred from the claim text.