Semiconductor device and manufacturing method thereof
AssigneeInnoscience (Zhuhai) Technology Co., Ltd.
InventorsQiyue ZHAO, Chuan HE, Zuer CHEN
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Abstract
Some embodiments of the disclosure provide a semiconductor device. The semiconductor device includes: a doped substrate; a barrier layer, disposed on the doped substrate; a channel layer, disposed between the doped substrate and the barrier layer; and a doped semiconductor structure, disposed in the doped substrate, where a band gap of the barrier layer is greater than a band gap of the channel layer, the doped substrate and the doped semiconductor structure have different polarities, and the doped substrate includes a doped silicon substrate.
Claims18
A semiconductor device, comprising:
- a doped substrate;
- a barrier layer, disposed on the doped substrate;
- a channel layer, disposed between the doped substrate and the barrier layer;
- and
- a doped semiconductor structure, disposed in the doped substrate, wherein
- a band gap of the barrier layer is greater than a band gap of the channel layer,
- the doped substrate and the doped semiconductor structure have different polarities, and
- the doped substrate comprises a doped silicon substrate.
A semiconductor device, comprising:
- a substrate;
- a high-electron-mobility transistor (HEMT), disposed on the substrate;
- a diode, disposed in the substrate;
- and
- a conductor layer, disposed below the substrate, wherein
- a source of the HEMT is electrically connected to an anode of the diode through the conductor layer, and
- a gate of the HEMT is electrically connected to a cathode of the diode.
Dependencies are inferred from the claim text.