Semiconductor device module and method of assembly
AssigneeLittelfuse, Inc.
InventorElmar Wisotzki
Life of this patent
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Abstract
A semiconductor device module. The semiconductor device module may include a first substrate; and a semiconductor die assembly, disposed on the first substrate. The semiconductor die assembly may include a first semiconductor die, bonded to the first substrate; a second semiconductor die, disposed over the first semiconductor die; and an electrical connector, disposed between the first semiconductor die and the second semiconductor die, wherein the semiconductor die assembly comprises an insulated gate bipolar transistor (IGBT) die and a freewheeling diode die.
Claims20
A method of operating a semiconductor device module, comprising:
- providing a switch assembly, the switch assembly comprising a pair of semiconductor die assemblies,
- wherein a first semiconductor die assembly of the pair of semiconductor die assemblies comprises a first insulated gate bipolar transistor (IGBT) die and a first freewheeling diode die, stacked upon the first IGBT die,
- wherein a second semiconductor die assembly of the pair of semiconductor die assemblies comprises a second insulated gate bipolar transistor (IGBT) die and a second freewheeling diode die, stacked upon the second IGBT die;
- and
- operating the switch assembly by switching a current through the switch assembly, between a first path through the first IGBT die and the second freewheeling diode die,
- and a second path through the second IGBT die and the first freewheeling diode die.
A method of reducing thermal swing during operation of a semiconductor die assembly, comprising:
- providing a switch assembly, the switch assembly comprising:
- a first insulated gate bipolar transistor (IGBT) die and a first freewheeling diode die, stacked upon the first IGBT die, and
- a second insulated gate bipolar transistor (IGBT) die and a second freewheeling diode die, stacked upon the second IGBT die;
- and
- generating a current signal using the switch assembly, wherein the current signal comprises a current cycle, characterized by a first half cycle and a second half cycle, wherein during the first half cycle:
- the first IGBT is active;
- the first freewheeling diode is inactive;
- the second IGBT is inactive;
- and
- the second freewheeling diode is active.
Dependencies are inferred from the claim text.