Semiconductor packages including stack modules comprised of interposing bridges and semiconductor dies

A semiconductor package comprising:

• first to fourth stages of stack modules which are vertically stacked by rotating each of the stack modules by different rotation angles corresponding to multiples of 90 degrees with respect to a rotation axis of the stack modules and by vertically and sequentially stacking the rotated stack modules,
• wherein each of the first to fourth stages of stack modules includes:
• an interposing bridge;
• first to fourth semiconductor dies disposed to surround the interposing bridge such that side surfaces of the first to fourth semiconductor dies face each other;
• and
• first to fourth groups of redistribution lines disposed to connect the first to fourth semiconductor dies to the interposing bridge,
• wherein the interposing bridge includes:
• an interposing bridge body including first to fourth divided regions, each of which is divided by 90 degrees using the rotation axis as a reference axis in a plan view;
• and
• first to fourth sets of through vias disposed in respective ones of the first to fourth divided regions and arrayed in four different array directions according the divided regions, wherein each of the first to fourth sets of through vias are arrayed in a plurality of columns and an angle between the four different array directions is 90 degrees,
• wherein the first to fourth sets of through vias are disposed in the first to fourth divided regions, respectively, and
• wherein columns in which the through vias connected to the first to fourth redistribution lines are arrayed are different according to the plurality of divided regions.

A semiconductor package comprising:

• a plurality of stack modules which are vertically stacked by rotating each of the stack modules by different rotation angles corresponding to multiples of a reference angle with respect to a rotation axis of the stack modules and by vertically and sequentially stacking the rotated stack modules,
• wherein each of the plurality of stack modules includes:
• a plurality of semiconductor dies disposed to have a rim-shaped form;
• a plurality of interposing bridges disposed to be adjacent to respective ones of the semiconductor dies;
• and
• redistribution lines connecting the plurality of semiconductor dies to respective ones of the plurality of interposing bridges,
• wherein each of the interposing bridges includes:
• an interposing bridge body;
• and
• a plurality of through vias disposed to penetrate the interposing bridge body and arrayed in a plurality of columns in a plan view,
• wherein if the interposing bridges are rotated by the reference angle with respect to the rotation axis, then the rotated interposing bridges overlap with the interposing bridges which are originally located,
• wherein the redistribution lines are disposed to connect the interposing bridges to respective ones of the semiconductor dies, and
• wherein the columns in which the through vias connected to the redistribution lines are arrayed are different according to the interposing bridges.

A semiconductor package comprising:

• first to fourth stages of stack modules which are vertically stacked by rotating each of the stack modules by different rotation angles corresponding to multiples of 90 degrees with respect to a rotation axis of the stack modules and by vertically and sequentially stacking the rotated stack modules,
• wherein each of the first to fourth stages of stack modules includes:
• first to fourth semiconductor dies disposed to have a rim-shaped form;
• first to fourth interposing bridges disposed to be adjacent to respective ones of the first to fourth semiconductor dies such that side surfaces of the first to fourth interposing bridges face side surfaces of the first to fourth semiconductor dies;
• and
• redistribution lines connecting the first to fourth of semiconductor dies to respective ones of the first to fourth of interposing bridges,
• wherein each of the first to fourth interposing bridges includes:
• an interposing bridge body;
• and
• through vias disposed to penetrate the interposing bridge body and arrayed in first to fourth columns,
• wherein if the first to fourth interposing bridges are rotated by 90 degrees with respect to the rotation axis, then the rotated first to fourth interposing bridges overlap with the first to fourth interposing bridges which are originally located,
• wherein the redistribution lines are disposed to connect the first to fourth interposing bridges to respective ones of the first to fourth semiconductor dies, and
• wherein the columns in which the through vias connected to the redistribution lines are arrayed are different according to the interposing bridges.