Batch processing oven and method

A batch processing oven, comprising:

• a processing chamber configured to support multiple device-holding panels disposed one above another, wherein each device-holding panel of the multiple device-holding panels is configured to support one or more semiconductor wafers or devices;
• a plurality of thermal plates positioned in the processing chamber, wherein the plurality of thermal plates are disposed one above another with a gap between adjacently positioned thermal plates, and wherein at least one device-holding panel of the multiple device-holding panels is disposed between, and spaced apart from, a pair of adjacently positioned thermal plates;
• a first gas port configured to direct a first gas into the processing chamber;
• and
• a second gas port configured to direct a second gas into the processing chamber.

A method of using a batch processing oven, comprising:

• positioning multiple device-holding panels in a processing chamber that includes a plurality of thermal plates disposed one above another with a gap between adjacently positioned thermal plates, wherein each device-holding panel of the multiple device-holding panels supports one or more semiconductor wafers or devices, and at least one device-holding panel of the multiple device-holding panels is disposed between, and spaced apart from, a pair of adjacently positioned thermal plates;
• heating the pair of adjacently positioned thermal plates to increase a temperature of the one or more semiconductor wafers or devices supported in the at least one device-holding panel disposed between the pair of adjacently positioned thermal plates;
• and
• cooling the pair of adjacently positioned thermal plates to decrease a temperature of the one or more semiconductor wafers or devices supported in the at least one device-holding panel disposed between the pair of adjacently positioned thermal plates.

A batch processing oven, comprising:

• a processing chamber configured to support multiple device-holding panels disposed one above another, wherein each device-holding panel of the multiple device-holding panels is configured to support one or more semiconductor wafers or devices;
• a plurality of thermal plates positioned in the processing chamber, wherein the plurality of thermal plates are disposed one above another with a gap between adjacently positioned thermal plates, and wherein each device-holding panel of the multiple device-holding panels is disposed between, and spaced apart from, a different pair of adjacently positioned thermal plates of the plurality of thermal plates;
• one or more heaters positioned on a wall of the processing chamber;
• a first gas port configured to direct a first gas into the processing chamber;
• and
• a second gas port configured to direct a second gas into the processing chamber.