Semiconductor device having a passivation layer and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Lung SHIH, Chao-Keng LI, Alan KUO, C. C. CHANG, Yi-An LIN
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Abstract
A semiconductor device includes a conductive pad over an interconnect structure, wherein the conductive pad is electrically connected to an active device. The semiconductor device further includes a dielectric layer over the conductive pad, wherein the dielectric layer has a first conformity. The semiconductor device further includes a passivation layer over the dielectric layer, wherein the passivation layer has a second conformity different from the first conformity.
Claims20
A semiconductor device comprising:
- a conductive pad over an interconnect structure, wherein the conductive pad is electrically connected to an active device;
- a dielectric layer over the conductive pad, wherein the dielectric layer has a first conformity;
- and
- a passivation layer over the dielectric layer, wherein the passivation layer has a second conformity different from the first conformity.
A method of making a semiconductor device, the method comprising:
- depositing a dielectric layer over a conductive pad using a first deposition process;
- and
- depositing a first passivation layer directly over the dielectric layer using a high density plasma chemical vapor deposition (HDPCVD), wherein the first deposition process is different from HDPCVD.
A method of making a semiconductor device, the method comprising:
- depositing a dielectric layer over a conductive pad, wherein the dielectric layer has a first conformity;
- and
- depositing a first passivation layer directly over the dielectric layer, wherein the first passivation layer has a second conformity greater than the first conformity.
Dependencies are inferred from the claim text.