Method of forming a photoresist over a bond pad to mitigate bond pad corrosion

A method comprising:

• depositing a polymeric material over a bond pad;
• performing a photolithography and etching process to remove a portion of the polymeric material that directly overlies the bond pad to form an opening in the polymeric material;
• performing a first cleaning process comprising plasma gas to clean the bond pad;
• curing the polymeric material after performing the first cleaning process to form a polymeric protection layer from the polymeric material;
• and
• performing a second cleaning process comprising a liquid solution to clean the bond pad and the polymeric protection layer, wherein the second cleaning process is performed after the curing of the polymeric material.

An integrated chip comprising:

• an interconnect structure arranged over a substrate, wherein the interconnect structure comprises wires and vias embedded in an interconnect dielectric structure;
• a bond pad arranged over the interconnect structure;
• a passivation structure arranged over the bond pad, wherein the passivation structure comprises a first opening arranged directly over the bond pad;
• and
• a polymeric protection layer arranged over the passivation structure and the bond pad, wherein the polymeric protection layer comprises a second opening arranged directly over the bond pad, wherein the second opening is smaller than the first opening, wherein the polymeric protection layer comprises a halogen, and wherein the polymeric protection layer further comprises:
• a bottommost surface directly contacting the bond pad;
• and
• an inner sidewall coupled to the bottommost surface by an inner corner region that is rounded,
• wherein the inner corner region is concave up with respect to a set of axes comprising a first axis and a second axis, wherein the first axis is perpendicular to the second axis, and wherein the second axis is normal to a top surface of the bond pad.