Drive backplane for light-emitting diode, method for preparing same, and display device
AssigneeBoe Technology Group Co., Ltd.
InventorHaixu Li
Life of this patent
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Abstract
Provided is a drive backplane for a light-emitting diode, including a substrate and a drive structure on the substrate, the drive structure including a thin-film transistor and a stress relief structure; wherein the thin-film transistor includes an active layer on the substrate, a first insulation layer covering the active layer, and a first gate on the first insulation layer; and the stress relief structure is on the first insulation layer and includes a first metal strip on a first side of the first gate and a second metal strip on a second side of the first gate, wherein the first side is opposite to the second side. A method for preparing the light-emitting diode and a display device are further disclosed.
Claims20
A drive backplane for a light-emitting diode, comprising a substrate and a drive structure on the substrate, the drive structure comprising a thin-film transistor and a stress relief structure;
- wherein
- the thin-film transistor comprises an active layer on the substrate, a first insulation layer covering the active layer, and a first gate on the first insulation layer;
- wherein the active layer comprises a channel region, a first doped region and a second doped region;
- and
- the stress relief structure is on the first insulation layer and comprises a first metal strip on a first side of the first gate and a second metal strip on a second side of the first gate, wherein the first side is opposite to the second side.
A method for preparing a drive backplane for a light-emitting diode, comprising:
- forming an active layer on a substrate, wherein the active layer comprises a channel region, a first doped region, and a second doped region;
- forming a first insulation layer covering the active layer;
- and
- forming a first gate and a stress relief structure on the first insulation layer by a single patterning process, wherein the stress relief structure comprises a first metal strip on a first side of the first gate and a second metal strip on a second side of the first gate.
A display device, comprising a drive backplane for the light-emitting diode;
- wherein the drive backplane for the light-emitting diode comprises:
- a substrate and a drive structure on the substrate, the drive structure comprising a thin-film transistor and a stress relief structure;
- wherein
- the thin-film transistor comprises an active layer on the substrate, a first insulation layer covering the active layer, and a first gate on the first insulation layer;
- wherein the active layer comprises a channel region, a first doped region and a second doped region;
- and
- the stress relief structure is on the first insulation layer and comprises a first metal strip on a first side of the first gate and a second metal strip on a second side of the first gate, wherein the first side is opposite to the second side.
Dependencies are inferred from the claim text.