Method of Forming an Interconnect Structure Having an Air Gap and Structure Thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSzu-Ping Tung, Chih-Chien Chi, Hung-Wen Su
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Abstract
A semiconductor device and method of manufacture are provided which utilize an air gap to help isolate conductive structures within a dielectric layer. A first etch stop layer is deposited over the conductive structures, and the first etch stop layer is patterned to expose corner portions of the conductive structures. A portion of the dielectric layer is removed to form an opening. A second etch stop layer is deposited to line the opening, wherein the second etch stop layer forms a stepped structure over the corner portions of the conductive structures. Dielectric material is then deposited into the opening such that an air gap is formed to isolate the conductive structures.
Claims20
An interconnection structure, comprising:
- a substrate;
- a patterned layer formed on the substrate and having at least a trench formed therein;
- a first dielectric layer formed on the patterned layer and forming overhang features on upper corners of the trench;
- a second dielectric layer formed on the first dielectric layer, completely covering the patterned layer and striding over the trench;
- and
- an air gap enclosed in the trench, the air gap in direct contact with the first dielectric layer and the second dielectric layer.
An interconnection structure, comprising:
- a substrate;
- a first conductive feature separated by a trench from a second conductive feature over the substrate;
- a first dielectric layer lining sidewalls of the trench, an air gap being located at least partially within the trench between separate portions of the first dielectric layer;
- and
- a second dielectric layer extending across the trench and sealing the air gap.
A method of forming an interconnection structure, comprising:
- providing a substrate;
- forming a patterned layer on the substrate, the patterned layer comprising at least a trench formed therein;
- depositing a first dielectric layer on the patterned layer and forming an air gap in the trench;
- and
- depositing a second dielectric layer on the first dielectric layer and completely covering the patterned layer.
Dependencies are inferred from the claim text.