Method for fabricating semiconductor device

A method for fabricating a semiconductor device, the method comprising:

• sequentially forming a first interlayer insulating film on a substrate, a first wiring pattern in the first interlayer insulating film, a first etching stop film on the first interlayer insulating film, and a second interlayer insulating film on the first etching stop film;
• forming a via and a second wiring pattern, such that the via penetrates the first interlayer insulating film, and the second wiring pattern penetrates the first etching stop film and the second interlayer insulating film to connect to the via;
• etching a portion of the second interlayer insulating film to form a recess;
• and
• forming a preliminary capping film on the second interlayer insulating film, such that at least a portion of the preliminary capping film overlaps the recess in a vertical direction.

A method for fabricating a semiconductor device, the method comprising:

• sequentially forming a first interlayer insulating film on a substrate, a first wiring pattern in the first interlayer insulating film, a first etching stop film on the first interlayer insulating film, and a second interlayer insulating film on the first etching stop film;
• forming a via and a second wiring pattern, such that the via penetrates the first interlayer insulating film, and the second wiring pattern penetrates the first etching stop film and the second interlayer insulating film to connect to the via;
• forming a recess in the second interlayer insulating film;
• forming a preliminary capping film overlapping with the recess on the second interlayer insulating film;
• forming a plurality of air gaps periodically arranged in the second interlayer insulating film using the recess and the preliminary capping film;
• and
• forming a capping film which covers an upper surface of the second interlayer insulating film and an upper surface of the second wiring pattern, such that the capping film defines an upper part of each of the plurality of air gaps.