Semiconductor device
AssigneeKioxia Corporation
InventorAtsushi KATO
Life of this patent
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Abstract
A semiconductor device includes a first substrate, a logical circuit, a first insulating film, a wiring, a plug, and a first layer containing a metal oxide or a metal nitride. The logical circuit is disposed on the first substrate. The first insulating film is disposed above the logical circuit. The wiring includes a first film disposed in the first insulating film, the first film extending in a first direction along an upper surface of the first substrate, and the first film containing a metal, and a first metal layer disposed in the first insulating film via the first film. The plug is disposed under the wiring, extends in a second direction that intersects the first direction, and is electrically connected to the wiring. The first layer is provided between an upper end of the plug and a bottom end of the wiring.
Claims20
A semiconductor device comprising:
- a substrate;
- a first insulating film disposed above the substrate;
- a wiring disposed in the first insulating film, the wiring extending in a first direction along an upper surface of the substrate, the wiring having a first film containing a metal and a first metal layer that is disposed in the first insulating film via the first film;
- a plug disposed on the wiring, the plug extending in a second direction that intersects the first direction, the plug electrically connected to the wiring;
- and
- a first layer containing a metal oxide or a metal nitride, the first layer disposed between a bottom end of the plug and an upper end of the wiring.
A semiconductor device comprising:
- a first substrate;
- a logical circuit disposed on the first substrate;
- a first insulating film disposed above the logical circuit;
- a wiring including
- a first film disposed in the first insulating film, the first film extending in a first direction along an upper surface of the first substrate, the first film containing a metal, and
- a first metal layer disposed in the first insulating film via the first film;
- a plug disposed under the wiring, the plug extending in a second direction that intersects the first direction, the plug electrically connected to the wiring;
- and
- a first layer, containing a metal oxide or a metal nitride, the first layer disposed between an upper end of the plug and a bottom end of the wiring.
Dependencies are inferred from the claim text.