Interposer and semiconductor package including the same

A method of manufacturing an interposer, the method comprising:

• preparing a base substrate comprising a through electrode;
• forming, on a top surface of the base substrate, an interconnection structure comprising a metal interconnection pattern;
• forming, on the interconnection structure, a connection pad electrically connected to the metal interconnection pattern of the interconnection structure;
• forming, on the interconnection structure, an upper passivation layer covering a part of the connection pad and having compressive stress;
• forming, on a bottom surface of the base substrate, a lower passivation layer having compressive stress;
• and
• forming, on the lower passivation layer, a lower conductive layer electrically connected to the through electrode,
• wherein a thickness of the lower passivation layer is greater than a thickness of the upper passivation layer.

A method of manufacturing a semiconductor package, the method comprising:

• preparing an interposer;
• and
• mounting at least one semiconductor chip on the interposer,
• wherein the preparing of the interposer comprises:
• preparing a base substrate comprising a through electrode;
• forming, on a top surface of the base substrate, an interconnection structure comprising a metal interconnection pattern;
• forming, on the interconnection structure, a connection pad electrically connected to the metal interconnection pattern of the interconnection structure;
• forming, on the interconnection structure, an upper passivation layer having compressive stress, a bottom region of the upper passivation layer including a first silicon oxide layer, and a bottom surface of the upper passivation layer being coplanar with a bottom surface of the connection pad;
• forming, on a bottom surface of the base substrate, a lower passivation layer having compressive stress that is less than the compressive stress of the upper passivation layer;
• and
• forming, on the lower passivation layer, a lower conductive layer electrically connected to the through electrode.