Back to results
US 2021/0265237 A1Published application
Semiconductor device and method for producing semiconductor device
AssigneeSumitomo Electric Industries, Ltd.
InventorsTatsuya HASHINAGA, Yutaka MORIYAMA
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes an insulating substrate having a first surface, a semiconductor chip that is embedded in the insulating substrate and has a second surface exposed in the first surface, and a heat dissipation layer that is in contact with the first surface and the second surface and has a plated layer.
Claims17
A semiconductor device comprising:
- an insulating substrate having a first surface,
- a semiconductor chip embedded in the insulating substrate and having a second surface exposed in the first surface, and
- a heat dissipation layer that is in contact with the first surface and the second surface and having a plated layer.
A method for producing a semiconductor device comprising:
- embedding a semiconductor chip having a second surface to be exposed in a first surface into an insulating substrate having the first surface, and
- forming a heat dissipation layer that is in contact with the first surface and the second surface and having a plated layer.
A method for producing a semiconductor device comprising:
- forming a wiring layer on a first insulating layer,
- mounting a semiconductor chip having a second surface on the wiring layer such that the second surface faces a direction opposite a direction towards the first insulating layer,
- forming a second insulating layer on the first insulating layer so as to cover the semiconductor chip,
- providing a first surface in the second insulating layer by polishing the second insulating layer until the second surface is exposed,
- forming a sputtered layer having a third surface in contact with the first surface and the second surface, and a fourth surface opposite to the third surface, and
- forming a plated layer having a fifth surface in contact with the fourth surface on the sputtered layer,
- wherein the forming a plated layer includes forming a first layer having the fifth surface on the sputtered layer by electroless plating,
- forming a second layer on the first layer by electroplating,
- polishing the second layer, and
- forming a third layer on the second layer by electroplating after the polishing the second layer.
7 more elements
A method for producing a semiconductor device, the method comprising:
- forming a wiring layer on a first insulating layer;
- mounting a semiconductor chip including a Cu layer having a second surface on the wiring layer such that the second surface faces a direction opposite a direction towards the first insulating layer;
- forming a second insulating layer on the first insulating layer so as to cover the semiconductor chip;
- providing a first surface in the second insulating layer by polishing the second insulating layer until the second surface is exposed;
- and
- forming a plated layer to be in contact with the first surface and the second surface,
- wherein the forming the plated layer includes
- forming a first layer in contact with the first surface and the second surface by electroless plating,
- forming a second layer on the first layer by electroplating,
- polishing the second layer, and
- forming a third layer on the second layer by electroplating after the polishing the second layer.
8 more elements
Dependencies are inferred from the claim text.