Line cut patterning using sacrificial material

A method for fabricating a semiconductor device, comprising:

• forming a first line pattern within sacrificial mandrel material disposed on at least one hard mask layer disposed on a substrate, the first line pattern having a pitch defined by a target line width and a minimum width of space between lines;
• forming, within the first line pattern, a first spacer having a width corresponding to the minimum width of space between lines to minimize pinch points and a first gap having the target line width;
• forming a first plug as a negative tone plug within the first gap corresponding to a first location above the at least one hard mask layer to block pattern transfer into the at least one hard mask layer;
• and
• forming a second plug corresponding to a second location above the at least one hard mask layer.

A method for fabricating a semiconductor device, comprising:

• forming a first line pattern within sacrificial mandrel material disposed on a plurality of hard mask layers disposed on a substrate, the first line pattern having a pitch defined by a target line width and a minimum width of space between lines, and the plurality of hard mask layers including a first hard mask layer and a second hard mask layer disposed on the first hard mask layer;
• forming, within the first line pattern, a first spacer having a width corresponding to the minimum width of space between lines to minimize pinch points and a first gap having the target line width;
• forming a first plug as a negative tone plug including first sacrificial cut material within the first gap corresponding to a first location above the at least one hard mask layer to block pattern transfer into the at least one hard mask layer;
• forming second sacrificial mandrel material above the first plug, the first spacer and the first sacrificial mandrel material;
• forming a second line pattern having the pitch within the second sacrificial mandrel material;
• forming, within the second line pattern, a second spacer having a width corresponding to the minimum width of space between lines to minimize pinch points and a second gap having the target line width;
• etching back the second spacer to form a second gap having the target line width;
• forming a line cut at a second location above the at least one hard mask layer;
• and
• forming a second plug including second sacrificial cut material within the line cut.