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US 2021/0265196 A1Published application
Semiconductor Device and Method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTzu-Ching Lin, Tuoh Bin Ng
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Abstract
An embodiment is a device including a first fin extending from a substrate, a first gate stack over and along sidewalls of the first fin, a first gate spacer disposed along a sidewall of the first gate stack, and a first source/drain region in the first fin and adjacent the first gate spacer. The first source/drain region including a first insulator layer on the first fin, and a first epitaxial layer on the first insulator layer.
Claims20
A device comprising:
- a first fin extending from a substrate;
- a first gate stack over and along sidewalls of the first fin;
- a first gate spacer disposed along a sidewall of the first gate stack;
- and
- a first source/drain region in the first fin and adjacent the first gate spacer, the first source/drain region comprising:
- a first insulator layer on the first fin;
- a first epitaxial layer on the first insulator layer;
- and
- a second epitaxial layer contacting the first insulator layer and the first epitaxial layer.
6 more elements
A device comprising:
- a fin extending from a substrate;
- a first gate over and along sidewalls of a first fin;
- gate spacers along sidewalls of the first gate;
- a first source/drain region in the first fin adjacent a first one of the gate spacers, the first source/drain region comprising:
- a first insulator layer;
- a first semiconductor layer over the first insulator layer and on the fin;
- a second semiconductor layer over the first insulator layer and the first semiconductor layer, the second semiconductor layer having a higher impurity concentration than the first semiconductor layer;
- and
- a gap between the first insulator layer and the second semiconductor layer, the gap being completely surrounded by the first insulator layer and the second semiconductor layer.
6 more elements
A device comprising:
- a first fin extending upwards from a substrate;
- a first gate over and along sidewalls of a first fin;
- a first gate spacer along a sidewall of the first gate;
- a first source/drain region in the first fin, the first source/drain region comprising:
- a non-conformal insulator layer;
- a first epitaxial layer over the non-conformal insulator layer and on the first fin;
- and
- a second epitaxial layer on the first epitaxial layer, the first epitaxial layer being between and contacting the first epitaxial layer and the first fin, the second epitaxial layer contacting the non-conformal insulator layer.
5 more elements
Dependencies are inferred from the claim text.