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US 2021/0265181 A1Published application
Substrate treatment apparatus and substrate treatment method
AssigneeToshiba Memory Corporation
InventorsYoshinori KITAMURA, Katsuhiro SATO, Hiroaki ASHIDATE
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Abstract
According to embodiments, a substrate treatment apparatus includes a housing, a heater and a pipe. The housing stores solution containing phosphoric acid and houses a substrate including a silicon substrate. The heater heats the solution over a normal boiling point of the solution. The pipe supplies heated solution heated by the heater into the housing while generating air bubbles.
Claims4
1-11. (canceled)
A substrate treatment method comprising:
- immersing a substrate including a silicon nitride film in a housing which stores solution containing phosphoric acid;
- heating the solution over a normal boiling point of the solution outside the housing;
- and
- supplying heated solution into the housing while generating air bubbles.
1 more element
Dependencies are inferred from the claim text.