Semiconductor device and manufacturing method thereof
AssigneeAmkor Technology Singapore Holding Pte. Ltd.
InventorsWon Chul Do, Doo Hyun Park, Jong Sik Paek, Ji Hun Lee, Seong Min Seo
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Abstract
Provided are a semiconductor device including an interposer having a relatively thin thickness without a through silicon via and a method of manufacturing the same. The method of manufacturing a semiconductor device includes forming an interposer including a redistribution layer and a dielectric layer on a dummy substrate, connecting a semiconductor die to the redistribution layer facing an upper portion of the interposer, encapsulating the semiconductor die by using an encapsulation, removing the dummy substrate from the interposer, and connecting a bump to the redistribution layer facing a lower portion of the interposer.
Claims21
1-20. (canceled)
A method of manufacturing a semiconductor device, the method comprising:
- receiving a first structure comprising:
- a temporary support material;
- and
- an interposer comprising:
- an interposer conductive material;
- and
- an interposer dielectric material;
- coupling a semiconductor die to a first side of the interposer utilizing a first plurality of conductive bumps, where each conductive bump of the first plurality of conductive bumps is connected to a respective part of the interposer conductive material;
- removing the temporary support material from the first structure to reveal a second side of the interposer;
- and
- coupling a second plurality of conductive bumps to the second side of the interposer.
A method of manufacturing a semiconductor device, the method comprising:
- receiving a first structure comprising:
- an interposer comprising:
- an interposer conductive material;
- an interposer dielectric material;
- and
- an under bump metallization (UBM);
- coupling a semiconductor die to a first side of the interposer utilizing a first plurality of conductive bumps, where each conductive bump of the first plurality of conductive bumps is connected to a respective part of the interposer conductive material;
- and
- coupling a second plurality of conductive bumps to a second side of the interposer, where said coupling the second plurality of conductive bumps comprises coupling each conductive bump of the second plurality of conductive bumps to a respective part of the under bump metallization.
A semiconductor device comprising:
- a package substrate comprising a top substrate side and a bottom substrate side;
- a first signal distribution structure (SDS1) comprising a top SDS1 side, and a bottom SDS1 side directly coupled to the top substrate side, where:
- the first signal distribution structure (SDS1) is a multi-layer signal distribution structure;
- the first signal distribution structure (SDS1) is laterally narrower than the package substrate;
- and
- the first signal distribution structure (SDS1) is an only multi-layer signal distribution structure directly coupled to the top substrate side;
- a first semiconductor die coupled to the top SDS1 side;
- and
- a second semiconductor die coupled to the top SDS1 side.
Dependencies are inferred from the claim text.