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US 2021/0265169 A1Published application
Etching method and etching apparatus
AssigneeTokyo Electron Limited
InventorsKentaro YAMAGUCHI, Yusuke TAKINO
Life of this patent
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Abstract
An etching method includes: (a) etching a substrate including an etching target film and a mask formed on the etching target film to form a recess that reaches the etching target film; (b) forming a protective film having a thickness corresponding to one molecular layer on a surface of the recess using a first gas; (c) etching the etching target film with plasma generated from a second gas while leaving the protective film on a side wall of the recess; and (d) repeating (b) and (c).
Claims14
An etching method comprising:
- (a) etching a substrate including an etching target film and a mask formed on the etching target film to form a recess that reaches the etching target film;
- (b) forming a protective film having a thickness corresponding to one molecular layer on a surface of the recess using a first gas;
- (c) etching the etching target film with plasma generated from a second gas while leaving the protective film on a side wall of the recess;
- and
- (d) repeating (b) and (c).
2 more elements
An etching apparatus comprising:
- a chamber configured to provide a processing space;
- a stage provided inside the chamber and configured to place a substrate thereon;
- a gas supply configured to supply a processing gas into the chamber;
- and
- a controller configured to control respective components to perform an etching method including:
- (a) etching a substrate including an etching target film and a mask formed on the etching target film to form a recess that reaches the etching target film;
- (b) forming a protective film having a thickness corresponding to one molecular layer on a surface of the recess using a first gas;
- (c) etching the etching target film with plasma generated from a second gas while leaving the protective film on a side wall of the recess;
- and
- (d) repeating (b) and (c).
7 more elements
Dependencies are inferred from the claim text.