Semiconductor device and manufacturing method thereof

Abstract

Some embodiments of the disclosure provide a method for forming a semiconductor device. The method includes: forming a plurality of semiconductor material layers on a doped substrate; removing a part of the plurality of semiconductor material layers to form an exposed doped substrate; and ion implanting a dopant into the exposed doped substrate to form a doped semiconductor structure, where the doped substrate and the doped semiconductor structure have different polarities.

Dependencies are inferred from the claim text.