Multi-Layer Structures and Methods of Forming

A device, comprising:

• a substrate;
• a first multi-layer structure disposed on the substrate, wherein a first portion of a sidewall of the first multi-layer structure extends at a first angle, a second portion of the sidewall of the first multi-layer structure extends at a second angle, and the first angle is different than the second angle;
• a second multi-layer structure disposed on the substrate next to the first multi-layer structure;
• a first layer extending over the first multi-layer structure, over the substrate between the first multi-layer structure and the second multi-layer structure, and over the second multi-layer structure, wherein a first portion of the first layer extends over the first multi-layer structure, a second portion of the first layer extends over the second multi-layer structure, and the first portion of the first layer is discontinuous with the second portion of the first layer;
• and
• a second layer over the first layer, wherein a first portion of the second layer extends over the first multi-layer structure, a second portion of the second layer extends over the second multi-layer structure, and the first portion of the second layer is continuous with the second portion of the second layer.

A method, comprising:

• depositing a first material to coat sidewalls of a plurality of layers and sidewalls of a mask overlying the plurality of layers with the first material, wherein the plurality of layers extend laterally beyond edges of the mask;
• removing the first material from the sidewalls of the mask and the sidewalls of the plurality of layers using an ashing process, wherein the removing of the first material consumes a portion of the mask to form a remaining mask;
• and
• etching the plurality of layers using the remaining first mask as an etch mask.