Method for growing iii-v compound semiconductors on silicon-on-insulators
AssigneeThe Hong Kong University of Science and Technology
InventorsKei May Lau, Yu Han
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Abstract
The present disclosure relates to a method for growing III-V compound semiconductors on silicon-on-insulators. Starting from {111}-oriented Si seed surfaces between a buried oxide layer and a patterned mask layer, the III-V compound semiconductor is grown within lateral trenches by metal organic chemical vapor deposition such that the non-defective portion of the III-V compound semiconductor formed on the buried oxide layer is substantially free of crystalline defects and has high crystalline quality.
Claims20
A method for forming a region of a III-V compound semiconductor on a buried oxide layer comprising:
- providing a layered substrate comprising a silicon (Si) device layer, the buried oxide layer, and a patterned mask layer, the Si device layer being sandwiched between the buried oxide layer and the patterned mask layer, the patterned mask layer comprising one or more vertical trenches formed in the patterned mask layer and located on the Si device layer such that one or more exposed Si surfaces are formed on the Si device layer;
- starting from each exposed Si surface, etching the Si device layer laterally thereby forming one or more lateral trenches between the buried oxide layer and the patterned mask layer;
- etching each lateral Si surface of each lateral trench by anisotropic wet etching thereby forming one or more {111}-oriented Si seed surfaces between the buried oxide layer and the patterned mask layer;
- and
- starting from each {111}-oriented Si seed surface, growing an epitaxial layer of the III-V compound semiconductor laterally within its respective lateral trench by metal organic chemical vapor deposition thereby forming one or more epitaxial layers between the buried oxide layer and the patterned mask layer such that each epitaxial layer has a non-defective portion and a defective portion, the defective portion being sandwiched between the {111}-oriented Si seed surface and the non-defective portion, the non-defective portion forming the region of the III-V compound semiconductor on the buried oxide layer.
A method for growing a region of a III-V compound semiconductor on a buried oxide layer comprising:
- providing a layered substrate comprising a Si device layer, the buried oxide layer, and a patterned mask layer, the Si device layer being sandwiched between the buried oxide layer and the patterned mask layer, the patterned mask layer comprising one or more vertical trenches formed in the patterned mask layer and located on the Si device layer such that one or more exposed Si surfaces are formed on the Si device layer;
- starting from each exposed Si surface, etching the Si device layer laterally thereby forming one or more lateral trenches between the buried oxide layer and the patterned mask layer;
- etching each lateral Si surface of each lateral trench by anisotropic wet etching thereby forming one or more {111}-oriented Si seed surfaces between the buried oxide layer and the patterned mask layer;
- growing a wetting layer laterally on each lateral Si surface by first metal organic chemical vapor deposition;
- and
- starting from each wetting layer, growing an epitaxial layer of the III-V compound semiconductor laterally within its respective lateral trench by second metal organic chemical vapor deposition thereby forming one or more epitaxial layers between the buried oxide layer and the patterned mask layer such that each epitaxial layer has a non-defective portion and a defective portion, the defective portion being sandwiched between the {111}-oriented Si surface and the non-defective portion, the non-defective portion forming the region of the III-V compound semiconductor on the buried oxide layer.
Dependencies are inferred from the claim text.