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US 2021/0265158 A1Published application
Method of forming low-k material layer, structure including the layer, and system for forming same
AssigneeASM IP Holding B.V.
InventorChie Kaneko
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Abstract
Methods and systems for forming a cured low-k material layer on a surface of a substrate and structures and devices formed using the method or system are disclosed. Exemplary methods include providing a substrate within a reaction chamber of a reactor system, providing one or more precursors to the reaction chamber, providing plasma power to polymerize the one or more precursors, and curing the low-k material with activated species to form the cured low-k material layer.
Claims33
A method of forming a cured low-k material layer on a surface of a substrate, the method comprising the steps of:
- providing a substrate within a reaction chamber of a reactor system;
- providing one or more precursors to the reaction chamber;
- providing plasma power to polymerize the one or more precursors within the reaction chamber to form low-k material;
- and
- curing the low-k material with activated species to form the cured low-k material layer.
2 more elements
Dependencies are inferred from the claim text.