Substrate Placing Table, Plasma Processing Apparatus Provided With Same, And Plasma Processing Method
AssigneeSpp Technologies Co., Ltd.
InventorYasuyuki HAYASHI
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AssigneeSpp Technologies Co., Ltd.
InventorYasuyuki HAYASHI
Estimating the term…
Provided is a substrate placing table (15) capable of reducing influences of external factors such as the temperature inside a chamber (11). The substrate placing table (15) disposed in the chamber (11) in a plasma processing apparatus (1) includes an electrostatic chuck (61) and a cooling jacket (62), and the electrostatic chuck (61) consists of an upper disk part (61a) having an electrode (71) for electrostatic attraction incorporated therein, and a lower disk part (61 b) having a greater diameter than the upper disk part (61a) and having a heater (72) incorporated therein. A focus ring (64) disposed outside the upper disk part (61a) in a radial direction of the upper disk part (61a) and covering an upper surface of the lower disk part (61 b), an upper annular cover (65) for thermal insulation enclosing the lower disk part (61 b) and at least a part of the cooling jacket (62), and a lower annular cover (66) for thermal insulation clamping the cooling jacket (62) between itself and the upper annular cover (65) are made of ceramics.
A substrate placing table electrostatically attracting a substrate to be processed, comprising:
A plasma processing method performed with a plasma processing apparatus including an electrostatic chuck heating a substrate to be processed, and a cooling jacket cooling the electrostatic chuck, and having a minute clearance formed between the electrostatic chuck and the cooling jacket, the minute clearance being sealed from outside, wherein:
Dependencies are inferred from the claim text.