Method and apparatus for processing wafers
AssigneeLam Research Corporation
InventorsMing LI, Benson Quyen TONG, Chander RADHAKRISHNAN
Life of this patent
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Abstract
An apparatus for providing plasma processing is provided. A plasma processing chamber is provided. A first turbopump with an inlet is in fluid connection with the plasma processing chamber and an exhaust. A gas source provides gas to the plasma processing chamber. At least one gas line is in fluid connection between the gas source and the plasma processing chamber. At least one bleed line is in fluid connection with the at least one gas line. At least one gas line valve is on the at least one gas line located between, where the at least one bleed line is connected to the at least one gas line and the plasma processing chamber. At least one bypass valve is on the at least one bleed line.
Claims18
An apparatus for providing a plasma processing of a substrate, comprising:
- plasma processing chamber;
- a first turbopump with an inlet in fluid connection with the plasma processing chamber and an exhaust;
- a gas source for providing gas to the plasma processing chamber;
- at least one gas line in fluid connection between the gas source and the plasma processing chamber;
- at least one bleed line in fluid connection with the at least one gas line;
- at least one gas line valve on the at least one gas line located between where the at least one bleed line is connected to the at least one gas line and the plasma processing chamber;
- at least one bypass valve on the at least one bleed line;
- a dry pump with an inlet in fluid connection to the exhaust of the first turbopump, wherein the at least one bleed line is in fluid connection with the dry pump;
- and
- at least one pump out valve connected between the at least one bleed line and the dry pump.
A method for processing wafers in a plasma processing system, the plasma processing system including a plasma processing chamber and at least one gas line, the method comprising a plurality of cycles, wherein each cycle comprises:
- placing a first wafer with an etch layer in the plasma processing chamber;
- etching the etch layer of the first wafer in the plasma processing chamber;
- removing the first wafer from the plasma processing chamber;
- cleaning an interior of the plasma processing chamber with a waferless cleaning;
- and
- purging the at least one gas line with an inert gas, while the chamber is waferless.
Dependencies are inferred from the claim text.