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US 2021/0265135 A1Published application
Plasma processing method
AssigneeTokyo Electron Limited
InventorsMichiko NAKAYA, Yuya MINOURA, Taku GOHIRA
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Abstract
A method of processing a substrate with plasma includes: coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber; loading the substrate into the chamber; and processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.
Claims12
A method of processing a substrate with plasma, the method comprising:
- coating surfaces of components inside a chamber with a film having conductive properties by turning a first gas containing carbon and hydrogen into plasma inside the chamber;
- loading the substrate into the chamber;
- and
- processing the substrate by turning a second gas into plasma inside the chamber in a state where the surfaces of the components inside the chamber are coated with the film having conductive properties.
1 more element
Dependencies are inferred from the claim text.