Semiconductor memory device and method of operating the same

The semiconductor memory device according to claim wherein:

• the program operation comprises a plurality of program loops, each including a precharge phase, a program phase, and a verify phase,
• the first memory block and the second memory block are coupled to a common source line,
• the first source select line is disposed closer to the common source line than the second source select line, and
• in the precharge phase, the control logic controls the peripheral circuit so that the first source select line coupled to the second memory block floats and a ground voltage is applied to a second source select line coupled to the second memory block.

A method of operating a semiconductor memory device, the semiconductor memory device performing a program operation on a memory block selected from among a plurality of memory blocks, wherein the program operation comprises a plurality of program loops, each program loop comprising:

• a precharge phase of precharging a common source line;
• a program phase of programming a selected memory block;
• and
• a verify phase of verifying the selected memory block,
• wherein the precharge phase of precharging the common source line includes allowing a first source select line, among a plurality of source select lines coupled to an unselected memory block among the plurality of memory blocks, to float.