Memory system for performing a read operation and an operating method thereof

Abstract

A memory system includes a memory device including a plane including a plurality of memory blocks, each memory block including a plurality of memory cells, each memory cell capable of storing multi-bit data, and a controller configured to determine that a second memory block is a candidate block when an issue-triggering operation is performed for a first memory block, adjust levels of read voltages when receiving a read command for data stored in the second memory block determined as the candidate block, and control the memory device to supply adjusted levels of the read voltages to the second memory block to perform a read operation corresponding to the read command. The second memory block and the first memory block are included in the same plane. The issue-triggering operation includes either a program operation or an erase operation.

Dependencies are inferred from the claim text.