Methods of operating nonvolatile memory devices, methods of operating storage device and storage devices
AssigneeSamsung Electronics Co., Ltd.
InventorsSHIN-HO OH, MIN-CHEOL KWON, SANG-KWON MOON, SANG-WON JUNG
Life of this patent
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Abstract
A nonvolatile memory device includes multi-level cells in a memory cell array including a plurality of memory blocks, and each of the memory blocks includes a plurality of pages. A method of operating the nonvolatile memory device includes pre-programming multi-bit data in a pre-program block of the memory blocks, dividing the multi-level cells into a plurality of state groups based on state codes indicating states of the multi-level cells to generate digest data indicating state group codes corresponding to the state groups, and programming the digest data in a digest block of the memory blocks.
Claims6
A storage device comprising:
- a nonvolatile memory including a plurality of memory blocks that includes a pre-program block and a digest block, the pre-program block including a plurality of first cells, the digest block including a plurality of second cells;
- and
- a memory controller configured to pre-program data in the plurality of first cells, to divide the plurality of first cells into a plurality of state groups, to generate digest data indicating state group codes corresponding to the plurality of state groups, and to program the digest data stored in the digest block,
- wherein each of the plurality of first cells stores more bits than each of the plurality of second cells.
Dependencies are inferred from the claim text.