Variable resistive memory device and method of operating the same

A variable resistive memory device comprising:

• a memory cell array with a plurality of memory cells that are connected between a global word line and a global bit line;
• and
• a control circuit block configured to control operations of the memory cells,
• wherein the control circuit block comprises:
• a write circuit configured to apply a pre-selection current to the memory cell and to apply a write current to the memory cell after turning-on the memory cell based on a position of a selected memory cell, or to apply a pre-charge current, which is different from the pre-selection current, to the memory cell and to apply the write current to the memory cell after turning-on the memory cell based on the position of the selected memory cell;
• and
• a detection circuit connected to the global word line to detect a current of the selected memory cell and to enable a detection signal when turning-on the selected memory cell.

A method of operating a variable resistive memory device, the method comprising:

• identifying a position of a selected memory cell when a write operation is initiated;
• providing the selected memory cell with a pre-selection voltage and a pre-selection current when the selected memory cell is positioned in a first group;
• stopping the providing of the pre-selection voltage and the pre-selection current and providing the selected memory cell with a write voltage and a write current when a turning-on or a snapback is generated in the memory cell;
• providing the selected memory cell with a pre-charge voltage and a pre-charge current when the selected memory cell is positioned in a second group;
• and
• stopping the providing of the pre-charge voltage and the pre-charge current and providing the selected memory cell with the write voltage and the write current when the turning-on or the snapback is generated in the memory cell,
• wherein the pre-selection voltage is different from the pre-charge voltage.