Varying-polarity read operations for polarity-written memory cells
AssigneeMicron Technology, Inc.
InventorsInnocenzo Tortorelli, Hari Giduturi, Fabio Pellizzer
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Abstract
Methods, systems, and devices for varying-polarity read operations for polarity-written memory cells are described. Memory cells may be programmed to store different logic values based on applying write voltages of different polarities to the memory cells. A memory device may read the logic values based on applying read voltages to the memory cells, and the polarity of the read voltages may vary such that at least some read voltages have one polarity and at least some read voltages have another polarity. The read voltage polarity may vary randomly or according to a pattern and may be controlled by the memory device or by a host device for the memory device.
Claims27
A method, comprising:
- receiving, at a memory device, a first read command for a memory cell;
- applying, based at least in part on the first read command, a first read voltage having a first polarity to the memory cell;
- receiving, after the first read command, a second read command for the memory cell;
- and
- applying, based at least in part on the second read command, a second read voltage having a second polarity to the memory cell.
An apparatus, comprising:
- an array of memory cells;
- and
- an access component coupled with the array of memory cells and operable to:
- apply a write voltage to a memory cell of the array in response to a write command for the memory cell, wherein the memory cell is operable to store a logic value based at least in part on a polarity of the write voltage;
- apply a read voltage to the memory cell in response to a read command for the memory cell;
- a sense component coupled with the array of memory cells and operable to;
- sense whether the read voltage exceeds a threshold voltage of the memory cell;
- and
- generate an indication of the stored logic value based at least in part on whether the read voltage exceeds the threshold voltage of the memory cell and a polarity of the read voltage.
A method, comprising:
- storing, at a memory device, a plurality of logic values at a plurality of memory cells;
- receiving one or more read commands at the memory device;
- applying, based at least in part on the one or more read commands, a plurality of read pulses to the plurality of memory cells, wherein:
- a first subset of the plurality of read pulses each have a first polarity;
- and
- a second subset of the plurality of read pulses each have a second polarity;
- and
- transmitting, by the memory device and based at least in part applying the plurality of read pulses, signaling that indicates the stored plurality of logic values.
Dependencies are inferred from the claim text.