Stacked memory device performing function-in-memory (fim) operation and method of operating the same

A system comprising:

• a stacked memory device;
• and
• a host device configured to control the stacked memory device,
• wherein the stacked memory device comprises:
• a buffer semiconductor die configured to communicate with the host device;
• a plurality of memory semiconductor dies stacked on the buffer semiconductor die, the plurality of memory semiconductor dies comprising a plurality of memory banks;
• a plurality of through-silicon vias that electrically connect the buffer semiconductor die and the plurality of memory semiconductor dies;
• a function-in-memory (FIM) front-end circuit configured to receive a plurality of FIM instructions for a FIM operation from the host device and store the plurality of FIM instructions, wherein the FIM operation comprises data processing based on internal data read from the plurality of memory banks;
• and
• a plurality of FIM back-end circuits in respective ones of the plurality of memory semiconductor dies, wherein the plurality of FIM back-end circuits are configured to perform the FIM operation corresponding to the plurality of FIM instructions stored in the FIM front-end circuit under control of the FIM front-end circuit.

A method of operating a stacked memory device comprising a buffer semiconductor die that is configured to communicate with a host device and a plurality of memory semiconductor dies comprising a plurality of memory banks, wherein the buffer semiconductor die and the plurality of memory semiconductor dies are stacked, the method comprising:

• transferring a plurality of function-in-memory (FIM) instructions for a FIM operation from a host device to the stacked memory device, wherein the FIM operation comprises data processing based on internal data read from a plurality of memory banks;
• storing the plurality of FIM instructions in a FIM front-end circuit that is in the buffer semiconductor die or in the plurality of memory semiconductor dies;
• and
• performing the FIM operation corresponding to the FIM instructions stored in the FIM front-end circuit under control of the FIM front-end circuit, using a plurality of FIM back-end circuits included in respective ones of the plurality of memory semiconductor dies.