System for Growing Crystal Sheets
AssigneeII-Vi Delaware, Inc.
InventorsNathan Stoddard, Melissa Seitz
Life of this patent
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AssigneeII-Vi Delaware, Inc.
InventorsNathan Stoddard, Melissa Seitz
Estimating the term…
A die for growing a single crystal by an Edge-defined Film-fed Growth (EFG) technique includes a first outer die plate; a second outer die plate; and at least one central die plate positioned between the first outer die plate and the second outer die plate such that at least two capillaries are formed between the first outer die plate and the second outer die plate. First ends of the first outer die plate and the second outer die plate have a slope extending away from at least one of the at least two capillaries to form a growth interface at a top of the die. Second ends of the first outer die plate and the second outer die plate are immersed in a raw material melt provided in a crucible. The raw material melt is configured to travel to the growth interface by capillary flow of the raw material melt through the at least two capillaries.
A die for growing a single crystal by an Edge-defined Film-fed Growth (EFG) technique, the die comprising:
An apparatus for growing a crystal, the apparatus comprising:
Dependencies are inferred from the claim text.