Plasma shaping for diamond growth
AssigneeJ2 Materials, LLC
InventorsJohn P. Ciraldo, Jonathan Levine-Miles
Life of this patent
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Abstract
A system grows diamonds. The system includes a chemical vapor deposition reactor having a microwave chamber. The system further includes a single-crystal seed configured to be positioned in the chamber. The system also includes a precursor gas. A microwave source is configured to energize the precursor gas to produce a plasma plume. An electromagnetic source of the system is configured to generate a steering field to adjust a position of the plasma plume in the chamber and/or to adjust a shape of the plasma plume.
Claims25
A system for growing diamonds, the system comprising:
- a chemical vapor deposition reactor, the reactor including a microwave chamber;
- a single-crystal seed configured to be positioned in the chamber;
- a precursor gas;
- a microwave source configured to energize the precursor gas to produce a plasma plume;
- an electromagnetic source configured to generate a steering field to adjust a position of the plasma plume in the chamber and/or to adjust a shape of the plasma plume.
A method of growing diamonds, the method comprising:
- generating a plasma plume in a chamber, the chamber configured so that the plasma plume is unstable or metastable, such that the plasma plume moves between a first position and a second position;
- and
- biasing the plasma plume towards the first position.
A method of controlling diamond growth, the method comprising:
- providing a single-crystal seed in a growth environment;
- energizing a gas containing carbon to produce a plasma plume;
- and
- creating steering fields to modulate the carbon atom deposition characteristics of the plasma plume.
Dependencies are inferred from the claim text.