Process for the generation of metal or semimetal-containing films

Process for preparing metal- or semimetal-containing films comprising

• (a) depositing a metal- or semimetal-containing compound from the gaseous state onto a solid substrate and
• (b) bringing the solid substrate with the deposited metal- or semimetal-containing compound in contact with a compound of general formula (Ia), (Ib), (Ic), (Id) or (Ie)
• wherein E is Ti, Zr, Hf, V, Nb, or Ta,
• L1 and L2 is a pentadienyl or a cyclopentadienyl ligand, and
• X1 and X2 is nothing or a neutral ligand,
• R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, RH11, R12, R13, R14, R15, R16, R17, R20, R21, R22, R23, R24, R25, and R26 are each independently hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein for the compound of general formula (Ia), at least one of R1 to R10 contains at least one carbon and/or silicon atom and
• A is an alkyl group, an alkenyl group, an aryl group or a silyl group.

Use of the compound of general formula (Ia), (Ib), (Ic), (Id) or (Ie)

• wherein E is Ti, Zr, Hf, V, Nb, or Ta,
• X1 and X1 is nothing or a neutral ligand,
• R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R12, R13, R14, R15, R16, R17, R20, R21, R22, R23, R24, R25, and R26 are each hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, wherein for compound (Ia), at least one of R1 to R10 contains at least one carbon and/or silicon atom and
• A is an alkyl group, an alkenyl group, an aryl group or a silyl group as reducing agent in an atomic layer deposition process.