Deposition of tellurium-containing thin films
AssigneesApplied Materials, Inc., Wayne State University
InventorsThomas Knisley, Keenan N. Woods, Mark Saly, Charles H. Winter, Apoorva Upadhyay
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Abstract
Methods for depositing tellurium-containing films on a substrate are described. The substrate is exposed to a tellurium precursor and a reactant to form the tellurium-containing film (e.g., elemental tellurium, tellurium oxide, tellurium carbide, tellurium silicide, germanium telluride, antimony telluride, germanium antimony telluride). The exposures can be sequential or simultaneous.
Claims20
A method of depositing a film, the method comprising:
- exposing a substrate to a tellurium precursor in a processing chamber to deposit a film on the substrate;
- purging the processing chamber of the tellurium precursor,
- exposing the substrate to a reactant to react with the film to form a tellurium film on the substrate;
- and
- purging the processing chamber of the reactant.
A method of depositing a film, the method comprising:
- exposing a substrate to a tellurium precursor in a processing chamber to deposit a tellurium film on the substrate;
- purging the processing chamber of the tellurium precursor,
- exposing the substrate to one or more of a germanium precursor and an antimony precursor to react with the tellurium film to form one or more of a germanium tellurium film, germanium tellurium antimony film, or antimony tellurium film on the substrate;
- and
- purging the processing chamber of the germanium precursor and the antimony precursor.
A method of depositing a film, the method comprising:
- selectively forming a tellurium-containing film in a process cycle comprising sequential exposure of a substrate to a tellurium precursor, purge gas, reactant, and purge gas.
Dependencies are inferred from the claim text.