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US 2021/0257474 A1Published application
Semiconductor device and method for fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsIn Yeal LEE, Ju Youn KIM, Jin-Wook KIM, Ju Hun PARK, Deok Han BAE, Myung Yoon UM
Life of this patent
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Abstract
A semiconductor device includes a substrate, a gate structure on the substrate, and a gate contact in the gate structure. The gate structure includes a gate electrode extending in a first direction and a gate capping pattern on the gate electrode. The gate contact is connected to the gate electrode. The gate electrode includes a protrusion extending along a boundary between the gate contact and the gate capping pattern.
Claims21
A semiconductor device comprising:
- a substrate;
- a gate structure on the substrate, the gate structure including a gate electrode extending in a first direction and a gate capping pattern on the gate electrode, the gate electrode including a protrusion;
- and
- a gate contact in the gate structure and connected to the gate electrode, the gate contact positioned so the protrusion extends along a boundary between the gate contact and the gate capping pattern.
1 more element
A semiconductor device comprising:
- a substrate including an active region and a field region,
- the substrate including a multi-channel active pattern in the active region, the multi-channel active pattern extending in a first direction;
- a gate structure intersecting the multi-channel active pattern,
- the gate structure including a gate electrode extending in a second direction, the gate electrode including a protrusion including an inner wall and an outer wall,
- the outer wall being defined along a periphery of the inner wall;
- a source/drain pattern on at least one side of the gate structure and connected to the multi-channel active pattern;
- a gate contact on the active region of the substrate and connected to the gate electrode, at least a part of the gate contact being in a pocket defined by the inner wall of the protrusion of the gate electrode;
- and
- a source/drain contact on the active region of the substrate and connected to the source/drain pattern.
6 more elements
A semiconductor device comprising:
- a substrate;
- a plurality of nanosheets spaced apart from each other on the substrate, each of the plurality of nanosheets extending in a first direction;
- a gate structure including a gate electrode that wraps around each of the plurality of nanosheets on the substrate, the gate electrode extending in a second direction,
- the gate electrode including a protrusion that protrudes in a thickness direction of the substrate,
- the protrusion of the gate electrode including a first side wall and a second side wall that is opposite the first side wall and directly joins the first side wall, the first side wall of the protrusion of the gate electrode including a curved surface;
- a source/drain pattern connected to the plurality of nanosheets, the source/drain pattern on at least one side of the gate structure;
- and
- a gate contact in the gate structure and connected to the gate electrode, the gate contact being in contact with the first side wall of the protrusion of the gate electrode, the protrusion of the gate electrode covering at least a part of a side wall of the gate contact.
5 more elements
-26. (canceled)
Dependencies are inferred from the claim text.