Device and method for analysing a defect of a photolithographic mask or of a wafer
AssigneeCarl Zeiss SMT GmbH
InventorsGabriel Baralia, Christof Baur, Klaus Edinger, Thorsten Hofmann, Michael Budach
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Abstract
The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.
Claims32
A method for analyzing at least one defect of a photolithographic mask or of a wafer using a measuring system, the measuring system comprising at least one scanning probe microscope and at least one scanning particle beam microscope, the method comprising:
- a. analyzing the at least one defect using at least one probe of the at least one scanning probe microscope;
- b. producing at least one mark on the photolithographic mask or on the wafer using the at least one scanning probe microscope, wherein the at least one mark is embodied in a way that it can be detected by at least one particle beam of the at least one scanning particle beam microscope;
- and
- c. detecting the at least one mark using the at least one particle beam of the at least one scanning particle beam microscope.
A measuring system for analyzing at least one defect of a photolithographic mask or of a wafer comprising:
- a. at least one scanning probe microscope having a probe arrangement, wherein the probe arrangement comprises at least one first probe embodied to analyze the at least one defect;
- b. the at least one scanning probe microscope having means for producing at least one mark, by use of which a position of the at least one defect on the photolithographic mask or on the wafer is indicated;
- and
- c. at least one scanning particle beam microscope embodied to detect the at least one mark.
A method for analyzing at least one defect of a photolithographic mask or of a wafer, the method comprising:
- a. analyzing the at least one defect using at least one scanning probe microscope;
- b. producing at least one mark on the photolithographic mask or on the wafer using the at least one scanning probe microscope, wherein the at least one mark is embodied in a way that it can be detected by at least one scanning particle beam microscope;
- and
- c. detecting the at least one mark using at least one particle beam of the at least one scanning particle beam microscope.
Dependencies are inferred from the claim text.